germanium transistor - definição. O que é germanium transistor. Significado, conceito
Diclib.com
Dicionário ChatGPT
Digite uma palavra ou frase em qualquer idioma 👆
Idioma:

Tradução e análise de palavras por inteligência artificial ChatGPT

Nesta página você pode obter uma análise detalhada de uma palavra ou frase, produzida usando a melhor tecnologia de inteligência artificial até o momento:

  • como a palavra é usada
  • frequência de uso
  • é usado com mais frequência na fala oral ou escrita
  • opções de tradução de palavras
  • exemplos de uso (várias frases com tradução)
  • etimologia

O que (quem) é germanium transistor - definição

CHEMICAL COMPOUND
Silicon-Germanium-On-Insulator; Silicon germanium on insulator; Sgoi; Silicon germanium; Silicon germanide; Germanium silicide; SiGe; Silicon-germanium

Transistor-Transistor Logic         
  • Standard TTL NAND with a "totem-pole" output stage, one of four in 7400
  • A real-time clock built of TTL chips around 1979
  • Two-input TTL [[NAND gate]] with a simple output stage (simplified)
CLASS OF DIGITAL CIRCUITS BUILT FROM BIPOLAR JUNCTION TRANSISTORS (BJTS) AND RESISTORS; TRANSISTORS PERFORM BOTH THE LOGIC FUNCTION (E.G. AND) AND THE AMPLIFYING FUNCTION
Transistor transistor logic; Transistor-transistor logic; LVTTL; Transistor Transistor Logic; FJ series; TTL logic; Transistor-to-transistor logic; Transistor-coupled transistor logic; TCTL; TTL (electronics); TTL (logic)
(TTL) A common semiconductor technology for building discrete digital logic integrated circuits. It originated from {Texas Instruments} in 1965. There have been several series of TTL logic: 7400: 10 ns propagation time, 10 mW/gate power consumption, obsolete; 74L00: Low power: higher resistances, less dissipation (1 mW), longer propagation time (30 ns); 74H00: High power: lower resistances, more dissipation: less sensitivity for noise; 74S00: Schottky-clamped: faster switching (3 ns, 19 mW) by using Schottky diodes to prevent the transistors from saturation; 74LS00: Low power, Schottky-clamped (10 ns, 2 mW); 74AS00: Advanced Schottky: faster switching, less dissipation, (1.5 ns, 10 mW); 74ALS00: Advanced Low power Schottky (4 ns, 1.3 mW). For each 74xxx family there is a corresponding 54xxx family. The 74 series are specified for operation at 0 - 70 C whereas the 54 (military) series can operate at -55 - 125 C See also CMOS, ECL.
LVTTL         
  • Standard TTL NAND with a "totem-pole" output stage, one of four in 7400
  • A real-time clock built of TTL chips around 1979
  • Two-input TTL [[NAND gate]] with a simple output stage (simplified)
CLASS OF DIGITAL CIRCUITS BUILT FROM BIPOLAR JUNCTION TRANSISTORS (BJTS) AND RESISTORS; TRANSISTORS PERFORM BOTH THE LOGIC FUNCTION (E.G. AND) AND THE AMPLIFYING FUNCTION
Transistor transistor logic; Transistor-transistor logic; LVTTL; Transistor Transistor Logic; FJ series; TTL logic; Transistor-to-transistor logic; Transistor-coupled transistor logic; TCTL; TTL (electronics); TTL (logic)
Low Voltage Transistor Transistor Level (Reference: IC)
Transistortransistor logic         
  • Standard TTL NAND with a "totem-pole" output stage, one of four in 7400
  • A real-time clock built of TTL chips around 1979
  • Two-input TTL [[NAND gate]] with a simple output stage (simplified)
CLASS OF DIGITAL CIRCUITS BUILT FROM BIPOLAR JUNCTION TRANSISTORS (BJTS) AND RESISTORS; TRANSISTORS PERFORM BOTH THE LOGIC FUNCTION (E.G. AND) AND THE AMPLIFYING FUNCTION
Transistor transistor logic; Transistor-transistor logic; LVTTL; Transistor Transistor Logic; FJ series; TTL logic; Transistor-to-transistor logic; Transistor-coupled transistor logic; TCTL; TTL (electronics); TTL (logic)
Transistortransistor logic (TTL) is a logic family built from bipolar junction transistors. Its name signifies that transistors perform both the logic function (the first "transistor") and the amplifying function (the second "transistor"), as opposed to resistor–transistor logic (RTL) or diode–transistor logic (DTL).

Wikipédia

Silicon–germanium

SiGe ( or ), or silicon–germanium, is an alloy with any molar ratio of silicon and germanium, i.e. with a molecular formula of the form Si1−xGex. It is commonly used as a semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS transistors. IBM introduced the technology into mainstream manufacturing in 1989. This relatively new technology offers opportunities in mixed-signal circuit and analog circuit IC design and manufacture. SiGe is also used as a thermoelectric material for high-temperature applications (>700 K).